More than two years have passed since the UFS 3.1 standard of storage memories was made official, the one that until now has guaranteed the best performance both in terms of speed and in terms of consumption. Until now , because Samsung (Semiconductor) today announces the arrival of memories compliant with the new UFS 4.0 standard approved by JEDEC (the consortium that defines the standards of solid state storage memories).
FAST, EFFICIENT, IN PRODUCTION IN THE THIRD QUARTER
The substantial steps forward compared to UFS 3.0 and 3.1 memories always lie in the wake of higher data transfer rates and better energy efficiency.
More in detail, UFS 4.0 memories:
- they guarantee a maximum data transfer speed of 23.2Gbps per lane , a value doubled compared to UFS 3.1 memories;
- they use Samsung’s seventh generation V-NAND memories and a proprietary controller that allow for sequential reading speeds of up to 4,200MB / s and sequential writing speeds of up to 2,800MB / s;
- they improve energy efficiency with a sequential reading speed of 6MB / s per mA , that is an improvement of 46% compared to the previous generation with intuitive advantages in terms of autonomy of the device that uses them;
- they are made in a compact package: 11mm x 13mm x 1mm, a feature that improves integration into the devices, simplifying the work of designers;
- they are produced in various capacities up to a maximum of 1TB.
UFS 4.0 memories will find application in all devices that need memories with a generous bandwidth: 5G smartphones, but also AR / VR and automotive devices. Mass production of the new memories is scheduled for the third quarter of the year (July to September). It is not yet known which devices will be the first to use the new UFS 4.0 memories, but one of the most plausible hypotheses is that the future top range of the South Korean company will do so – eg. the future Galaxy S23 range .
